| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a magnetoresistive element capable of preventing formation of a short path. <P>SOLUTION: According to one embodiment, a manufacturing method of a magnetoresistive element comprises the steps of: sequentially laminating, on a first electrode, a recording layer having a variable magnetization direction, a non-magnetic layer, a fixed layer having a fixed magnetization direction and a second electrode; processing the fixed layer by using the second electrode processed into a predetermined shape as a mask; forming side wall portions having first side wall films and second side wall films interposed among the first side wall films, the fixed layer and the second electrode on both side portions of the fixed layer and the second electrode; and processing the non-magnetic layer and the recording layer by physical etching by using the side wall portions as the mask. The first side wall films have an etching rate in the physical etching less than that of the second side wall films. <P>COPYRIGHT: (C)2013,JPO&INPIT |
