| 摘要 |
The electron beam device for pattern projection is particularly suitable for producing integrated semiconductor appliances. The device comprises beam-forming apertures (13, 17), which are in the beam path downstream of the beam source (10), for projecting characters or parts of a pattern onto a target. The appliance allows up to 1600 pixels to be addressed simultaneously and patterns, especially patterns which recur very frequently, to be imaged at high speed. <IMAGE> |
