发明名称 |
MONOLITHIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Disclosed herein is a monolithic semiconductor device including: a substrate; a high electron mobility transistor (HEMT) structure that is a first device structure formed on the substrate; and a laterally diffused metal oxide field effect transistor (LDMOSFET) structure that is a second device structure formed to be connected with the HEMT structure on the substrate.The monolithic semiconductor device according to preferred embodiments of the present invention is a device having characteristics of a normally-off device while maintaining high current characteristics in a normally-on state, thereby improving high current and high voltage operation characteristics.
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申请公布号 |
US2013146888(A1) |
申请公布日期 |
2013.06.13 |
申请号 |
US201213402692 |
申请日期 |
2012.02.22 |
申请人 |
PARK YOUNG HWAN;JEON WOO CHUL;PARK KI YEOL;HONG SEOK YOON;SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
PARK YOUNG HWAN;JEON WOO CHUL;PARK KI YEOL;HONG SEOK YOON |
分类号 |
H01L29/10 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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