| 摘要 |
<p>This method for manufacturing a metal lattice comprises forming a depression in the principal face of a silicon substrate, forming a first insulation layer on the surface of the side on which the depression is formed, removing the first insulation layer formed on the bottom part of the depression, and embedding metal in the depression by an electroforming process. Here, before the metal is embedded in the depression by the electroforming process, a second insulation layer is formed in a portion adjoining an edge part of the depression. Consequently, this method for manufacturing a metal lattice enables the metal portion of the lattice to be formed more compactly by the electroforming process. The present invention also provides a metal lattice manufactured by this method for manufacturing a metal lattice, and provides an X-ray imaging apparatus that uses the metal lattice.</p> |
