| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce power consumption of a cross point type resistance change memory. <P>SOLUTION: A semiconductor memory device includes a memory cell array, and a control circuit. The memory cell array includes memory cells which are arranged at intersections between a plurality of first wiring lines and a plurality of second wiring lines and each have a rectifying element and a variable resistive element connected in series to each other. When an operation for changing data held in a selected memory cell is performed, the control circuit applies a first voltage to the selected first wiring line, applies a second voltage to the selected second wiring line, applies a third voltage to the unselected first wiring line, and applies a fourth voltage larger than the third voltage to the unselected second wiring line. An absolute value of a difference between the third voltage and the fourth voltage is made smaller than an absolute value of a difference between the first voltage and the second voltage by an offset voltage. A value of the offset voltage increases as the absolute value of the difference between the first voltage and the second voltage increases. <P>COPYRIGHT: (C)2013,JPO&INPIT |
