发明名称 Integrated Capacitive Device Having a Thermally Variable Capacitive Value
摘要 An integrated circuit, comprising a capacitive device having a thermally variable capacitive value and comprising a thermally deformable assembly disposed within an enclosure, and comprising an electrically-conducting fixed body and a beam held at at least two different locations by at least two arms rigidly attached to edges of the enclosure, the beam and the arms being metal and disposed within the first metallization level. A part of the said thermally deformable assembly may form a first electrode of the capacitive device and a part of the said fixed body may form a second electrode of the capacitive device. The thermally deformable assembly has a plurality of configurations corresponding respectively to various temperatures of the said assembly and resulting in a plurality of distances separating the two electrodes and various capacitive values in the capacitive device corresponding to the plurality of distances.
申请公布号 US2013147004(A1) 申请公布日期 2013.06.13
申请号 US201213688022 申请日期 2012.11.28
申请人 STMICROELECTRONICS (ROUSSET) SAS;STMICROELECTRONICS (ROUSSET) SAS 发明人 RIVERO CHRISTIAN;FORNARA PASCAL;DI-GIACOMO ANTONIO
分类号 H01L49/02 主分类号 H01L49/02
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