| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide semiconductor processing components and a treating method which realize superior purity and larger semiconductor wafers. <P>SOLUTION: A semiconductor processing component has an outer surface portion made of silicon carbide, the outer surface portion having a skin impurity level and a bulk impurity level. The skin impurity level is an average impurity level from 0 nm to 100 nm in depth in the outer surface portion, the bulk impurity level is measured at a depth of at least 3 microns in the outer surface portion, and the skin impurity level is 80% or less of the bulk impurity level. <P>COPYRIGHT: (C)2013,JPO&INPIT |
