发明名称 QUANTUM DOT DEVICE INCLUDING DIFFERENT KINDS OF QUANTUM DOT LAYERS
摘要 A quantum dot device includes: a cathode layer; an anode layer; an active layer that is disposed between the cathode layer and the anode layer and includes a quantum layer; and an electron movement control layer that is disposed between the cathode layer and the anode layer and includes a different kind of quantum layer having an energy level different from that of the quantum layer comprised in the active layer.
申请公布号 US2013146838(A1) 申请公布日期 2013.06.13
申请号 US201213613203 申请日期 2012.09.13
申请人 KU JI-YEON;KIM TAE-HO;CHUNG DAE-YOUNG;CHO KYUNG-SANG;CHOI BYOUNG-LYONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 KU JI-YEON;KIM TAE-HO;CHUNG DAE-YOUNG;CHO KYUNG-SANG;CHOI BYOUNG-LYONG
分类号 H01L33/04 主分类号 H01L33/04
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