| 摘要 |
PURPOSE: A bolometer infrared sensor with improved uniformity of resistance between processes and a manufacturing method thereof are provided to avoid a change in the performance of a bolometer generated when the specific resistances of the infrared sensors are not identical by a deviation between sensors. CONSTITUTION: A bolometer infrared sensor with improved resistance uniformity between processes comprises a silicon substrate(510), a reflective plate(520), a metal support column(530), a first support layer(550), an absorbing layer(551), a temperature-sensitive resistor(540), a connection leg(542), and a second support layer(560). The silicon substrate includes a signal acquisition circuit. The reflective plate is formed on the silicon substrate and reflects infrared rays. The metal support column is formed on the reflective plate. The first support layer is connected to the metal support column and provides a structure thermally isolated. The absorbing layer is formed on the first support layer, thereby improving an absorption rate of the infrared rays becoming incident. The temperature-sensitive resistor is formed on the absorbing layer, and the resistance thereof is changed when temperature is changed by the infrared rays absorbed by the absorbing layer. |
