| 摘要 |
<p>The present invention relates to a copper alloy for electronic materials containing Ni: 1.0-2.5% by mass, Co: 0.5-2.5% by mass, Si: 0.3-1.2% by mass, and the remainder comprising Cu and unavoidable impurities, wherein among the second phase particles that precipitated in the matrix, the number density of those having a particle size of 5-50 nm is 1x10 12 to 1x10 14 /mm 3 , and the number density of those having a particle size of 5 nm to less than 20 nm is 3-6 as represented by the ratio to the number density of those having a particle size of 20-50 nm.</p> |
