发明名称 Silicon substrate, epitaxial structure including the same, and method of manufacturing the silicon substrate
摘要 Crack formation and propagation in a silicon substrate may be reduced by forming a crack reducing portion. The silicon substrate includes a silicon main portion and a silicon edge portion formed around the silicon main portion. The crack reducing portion is formed on the silicon edge portion of the silicon substrate such that directions of crystal faces in the crack reducing portion are randomly oriented.
申请公布号 EP2602810(A1) 申请公布日期 2013.06.12
申请号 EP20120184304 申请日期 2012.09.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JUN-YOUN;KIM, JAE-KYUN;CHAE, SU-HEE;HONG, HYUN-GI
分类号 H01L21/02 主分类号 H01L21/02
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