发明名称 Quantum Dot Device including Different Kinds of Quantum Dot layers
摘要 <p>A quantum dot device includes: a cathode layer; an anode layer; an active layer that is disposed between the cathode layer and the anode layer and includes a quantum layer; and an electron movement control layer that is disposed between the cathode layer and the anode layer and includes a different kind of quantum layer having an energy level different from that of the quantum layer comprised in the active layer.</p>
申请公布号 EP2602825(A2) 申请公布日期 2013.06.12
申请号 EP20120191733 申请日期 2012.11.08
申请人 SAMSUNG ELECTRONICS CO., LTD 发明人 KU, JI-YEON;KIM, TAE-HO;CHUNG, DAE-YOUNG;CHO, KYUNG-SANG;CHOI, BYOUNG-LYONG
分类号 H01L33/06;B82Y10/00;H01L29/06;H01L29/08;H01L29/12;H01L31/0352;H01L31/06 主分类号 H01L33/06
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