发明名称 |
Patternable low-K dielectric interconnect structure with a graded cap layer and method of fabrication |
摘要 |
An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.
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申请公布号 |
US8461039(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US201213524298 |
申请日期 |
2012.06.15 |
申请人 |
LIN QINGHUANG;NEUMAYER DEBORAH A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LIN QINGHUANG;NEUMAYER DEBORAH A. |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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地址 |
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