发明名称 |
Non-volatile memory devices with multiple layers having band gap relationships among the layers |
摘要 |
A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
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申请公布号 |
US8460999(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US201113067405 |
申请日期 |
2011.05.31 |
申请人 |
BAIK SEUNG-JAE;KIM HONG-SUK;CHOI SI-YOUNG;HWANG KI-HYUN;HYUN SANG-JIN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAIK SEUNG-JAE;KIM HONG-SUK;CHOI SI-YOUNG;HWANG KI-HYUN;HYUN SANG-JIN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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