发明名称 |
Method of fabricating a backside illuminated image sensor |
摘要 |
A method of forming a backside illuminated image sensor using an SOI substrate including a handle substrate, an insulator formed on the handle substrate, and a semiconductor layer formed on the insulator. A sensor element is formed on the semiconductor layer, a dielectric layer is formed overlying the semiconductor layer and the sensor element; and an interconnection structure is formed in the dielectric layer to electrically connect the sensor element. A carrier substrate is forming the dielectric layer. After flipping, the handle substrate is removed to expose the insulator layer.
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申请公布号 |
US8460979(B2) |
申请公布日期 |
2013.06.11 |
申请号 |
US20100762442 |
申请日期 |
2010.04.19 |
申请人 |
HUNG JHY-MING;LIU JEN-CHENG;YAUNG DUN-NIAN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUNG JHY-MING;LIU JEN-CHENG;YAUNG DUN-NIAN |
分类号 |
H01L21/84;H01L21/30;H01L21/46 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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