发明名称 |
METHOD FOR PRODUCING CRYSTALLINE SILICON INGOT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a crystalline silicon ingot having low bulk defect density at a bottom part of the ingot, and having small silicon particles. <P>SOLUTION: This invention provides a method for producing a crystalline silicon ingot. The method utilizes a nucleation promotion layer 2 to facilitate a plurality of silicon particles 34 to nucleate on the nucleation promotion layer 2 from a silicon melt 32 and grow in a vertical direction until the silicon melt 32 is solidified to obtain the crystalline silicon ingot. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013112603(A) |
申请公布日期 |
2013.06.10 |
申请号 |
JP20120241091 |
申请日期 |
2012.10.31 |
申请人 |
SINO-AMERICAN SILICON PRODUCTS INC |
发明人 |
YU WEN-HUAI;YANG CHENG-JUI;YANG YU-MIN;PAI KAI YUAN;LAN WEN-CHIEH;CHIANG YU TSUNG;HSU SUNG-LIN;HSU WEN-CHING;LAN CHUNG-WEN |
分类号 |
C30B29/06;C01B33/02;C30B11/14 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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