发明名称 METHOD FOR PRODUCING CRYSTALLINE SILICON INGOT
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a crystalline silicon ingot having low bulk defect density at a bottom part of the ingot, and having small silicon particles. <P>SOLUTION: This invention provides a method for producing a crystalline silicon ingot. The method utilizes a nucleation promotion layer 2 to facilitate a plurality of silicon particles 34 to nucleate on the nucleation promotion layer 2 from a silicon melt 32 and grow in a vertical direction until the silicon melt 32 is solidified to obtain the crystalline silicon ingot. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013112603(A) 申请公布日期 2013.06.10
申请号 JP20120241091 申请日期 2012.10.31
申请人 SINO-AMERICAN SILICON PRODUCTS INC 发明人 YU WEN-HUAI;YANG CHENG-JUI;YANG YU-MIN;PAI KAI YUAN;LAN WEN-CHIEH;CHIANG YU TSUNG;HSU SUNG-LIN;HSU WEN-CHING;LAN CHUNG-WEN
分类号 C30B29/06;C01B33/02;C30B11/14 主分类号 C30B29/06
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