发明名称 METHOD FOR PRODUCING SEMICONDUCTOR GAS
摘要 <P>PROBLEM TO BE SOLVED: To provide an industrially applicable impurities-removing method, alternative to distillation, capable of producing monofluoromethane substantially containing neither trifluoromethane nor unsaturated compounds, in view of the fact that: monofluoromethane produced or treated in a vapor phase may be accompanied by trifluoromethane due to equilibrium, fluorination reaction or disproportional reaction; wherein, as their boiling points are close to each other, they cannot be efficiently separated from each other by distillation. <P>SOLUTION: A method for producing monofluoromethane is provided, including a step of bringing a trifluoromethane-containing monofluoromethane composition into contact with a trifluoromethane treatment liquid containing an amide of formula (1) (wherein, R<SP POS="POST">1</SP>, R<SP POS="POST">2</SP>and R<SP POS="POST">3</SP>are each H or alkyl, being optionally bound together to form a ring, wherein the carbon atom on the ring is optionally substituted by an oxygen, nitrogen and/or sulfur atom) and a base; and a step of bringing the composition into contact with sulfuric acid. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013112612(A) 申请公布日期 2013.06.10
申请号 JP20110256905 申请日期 2011.11.25
申请人 CENTRAL GLASS CO LTD 发明人 OKAMOTO MASAMUNE;TAKADA NAOKADO;IMURA HIDEAKI
分类号 C07C17/38;C07C19/08 主分类号 C07C17/38
代理机构 代理人
主权项
地址