发明名称 APPARATUS OF TREATING A SUBSTRATE IN A SINGLE WAFERTYPE
摘要 PURPOSE: A single wafer type substrate processing apparatus is provided to collect various kinds of gases without controlling the height of a wafer, and to reduce the size of an apparatus. CONSTITUTION: A support part(10) rotates and supports a wafer. An inner chamber(20) includes first to third outlet(21-23). An external chamber includes first to third exhaust ports(31-33) which selectively expose a specific outlet. The first to third exhaust ports are arranged in the upper and the lower part of the lateral surface of the external chamber. The external chamber includes first to third collection tubes(34,35,36) for gathering process gases.
申请公布号 KR20130060521(A) 申请公布日期 2013.06.10
申请号 KR20110126621 申请日期 2011.11.30
申请人 K.C.TECH CO., LTD. 发明人 YUN, GEUN SIK
分类号 H01L21/302 主分类号 H01L21/302
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