| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a desired pattern through a reverse mask process by making a step of an applied reverse material small. <P>SOLUTION: A pattern forming method includes the steps of: forming a first pattern in a first region on a processed film; forming a reverse material film including a photosensitive compound on the processed film so as to cover the first pattern; exposing and developing the reverse material film and processing the reverse material film into a second pattern in a second region different from the first region on the processed film; etching back the reverse material film so as to expose an upper surface of the first pattern after exposing and developing the reverse material film, and processing the reverse material film into a third pattern in the first region; and etching the processed film using the second pattern and the third pattern as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT |
