| 摘要 |
SHF transistor amplifier comprises a dielectric plate with printed wires located on face and back sides, comprises n identical SHF field effect (bipolar) transistors installed on the face side and connected to said printed wires on this side of plate, the plate is installed between wide walls of a rectangular waveguide in a manner that surface thereof is parallel to the narrow walls of waveguide. The dielectric plate comprises two layers in a manner that an interlayer surface comprises a solid metallization layer; the printed wires on the face side is made as two microstrip lines (first and second) located one by one with an axis parallel to the rectangular waveguide axis; the first and second microstrip lines within sections adjacent to the dielectric plate faces are ended with wires, whose ends are open and directed towards the wide waveguide walls; the metallization within said section is removed; the first and second microstrip lines are connected to the wires, whose width extends forming conducting sectors, to ends of which n short cuts of the microstrip lines are connected. |
