| 摘要 |
FIELD: measurement equipment.SUBSTANCE: in the measurement method of life cycle of minor charge carriers in silicon, which involves heating of a silicon ingot to the temperature of not less than 80°C, lighting of the ingot end with pulse exciting beam Lwith wave length ?=1.15+1.28 mcm and lighting of side surface of the ingot with sounding beam Lwith wave length ?<??6.0 mcm, crossing of beams Land Linside the ingot, recording of beam Lthat passed through the ingot, measurement of time dependence of intensity of beam Lthat passed through the ingot with further determination of life cycle of minor charge carriers for coordinate of a cross point of beams Land Land scanning of volume of the ingot with the above intersection area and determination of life time of minor charge carriers for scanned areas. Lighting of the ingot with beam Lis performed through a flat focusing lens, a flat focus of beam Lis located in the intersection plane of beams L, and scanning of the ingot volume is performed with the intersection area of beams Lwith focus of beam L.EFFECT: increasing productivity of the measurement method of life cycle of minor charge carriers during non-destructive layer-by-layer investigation of its distribution in silicon ingots.2 cl, 1 dwg |
