| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a fine structure and high electric characteristics and is manufactured at a high yield. <P>SOLUTION: The semiconductor device has: an oxide semiconductor film; a gate insulation film on the oxide semiconductor film; a gate electrode on the gate insulation film; a conductive film on the gate electrode; and a source electrode and a drain electrode coming into contact with side faces of the oxide semiconductor film and the gate insulation film. Levels of upper surfaces of the source electrode and the drain electrode are lower than a level of an upper surface of the gate electrode. The conductive film, the source electrode, and the gate electrode contains the same metal element. Additionally, a side wall insulation film covering a side face of the gate electrode may be formed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
