| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a through electrode with an insulation ring whose workability and functionality are both enhanced. <P>SOLUTION: Independent insulation rings 62a and 62b are formed by filling an insulation substance into insulation ring annular grooves CGa and CGb formed through dry etching. Also, TSV side wall insulation rings 61a and 61b are formed by covering side walls of TSV through holes THa and THb formed through dry etching with insulation films. Further, a TSV 7 is formed by filling a dielectric, such as copper, into remaining parts of the TSV through holes THa and THb with seed/barrier layers 71 in-between. Thicknesses of the TSV side wall insulation rings 61 are around a half of widths of the insulation ring annular grooves CG, in other words, thicknesses of the independent insulation rings 62. As a result, it is possible to set the thicknesses of the TSV side wall insulation rings 61 at around a third of the thicknesses of the TSV side wall insulation rings in the case where the TSV side wall insulation rings are provided independently. <P>COPYRIGHT: (C)2013,JPO&INPIT |
