| 摘要 |
<p>Provided is a semiconductor element, which is provided with a p-type semiconductor layer that can be smoothly formed as a thin film with excellent crystallinity even at a relatively low temperature, said layer being combined with an n-type ZnO semiconductor layer, and with which performance with excellent characteristics can be expected when applied to large-screen display apparatuses. Specifically, a lower electrode (2) and an n-type semiconductor layer (3), i.e., a ZnO active layer having a thickness of 2-4 mum, are formed on a glass substrate (10). A p-type ZnNiO layer (first p-type semiconductor layer) (4a), which is a p-type semiconductor material composed of Zn0.5Ni0.5O, and has a thickness of 200-400 nm, and a p-type NiO layer (second p-type semiconductor layer) (4b) are sequentially formed on the n-type semiconductor layer (3). An upper electrode (5) composed of a transparent electrode material, such as ITO, is formed on the p-type NiO layer.</p> |
