| 摘要 |
<p>A semiconductor device and a manufacturing method therefor. The manufacturing method comprises the following steps: providing a substrate (100), forming a dummy gate stack and a side wall (230) on the substrate (100), forming a source/drain area (110) at two sides of the dummy gate stack, and forming a stop layer (240) and a first interlayer dielectric layer (300) which cover the whole semiconductor device; removing a part of the stop layer (240), so as to expose the dummy gate stack, and continuing to remove the dummy gate stack, so as to expose a channel area; etching the channel area, and forming a groove structure; forming a new channel area in the groove structure, the new channel area being flush with an upper surface of the substrate (100), and the new channel area sequentially comprising a buffer layer, a Ge layer (120) and a Si cap layer at the start from an interface of the substrate; and forming a gate stack. In the method, by replacing Si with Ge to form a new channel area, the migration rate of the charge carrier is effectively improved, and the performance of the semiconductor device is improved.</p> |
