Glass Substrate Film Sputtering Target and Preparing Method Thereof

摘要

A preparing method of a glass substrate film sputtering target is disclosed, which comprises the following steps of: weighing an alloy material for forming the glass substrate film sputtering target; adding the alloy material weighed into a plasma pressure compaction sintering cavity and sintering the alloy material to obtain a sintered target, wherein the sintering temperature is 500° C.~1600° C. and the sintering time is 5~20 minutes; and post-processing the sintered target. A glass substrate film sputtering target prepared by the preparing method is further disclosed. Because the plasma pressure compaction for quick sintering is adopted for the glass substrate film sputtering target and the preparing method thereof of the present disclosure, quality of the target can be improved and the time necessary for preparing the target can be shortened.