发明名称 |
FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE |
摘要 |
The invention is a field-effect transistor with a channel consisting of a thin sheet of one or more atomic layers of lateral heterostructures based on hybridized graphene. The role of lateral heterostructures is to modify the energy gap in the channel so as to enable the effetive operation of the transistor in all bias regions. This solution solves the problem of the missing bandgap in single-layer and multi-layer graphene, which does not allow the fabrication of transistors that can be efficiently switched off. The possibility of fabricating lateral heterostructures, with patterns of domains with different energy dispersion relations, enables the realization of field-effect transistors with additional functionalities with respect to common transistors. |
申请公布号 |
WO2013080237(A1) |
申请公布日期 |
2013.06.06 |
申请号 |
WO2012IT00363 |
申请日期 |
2012.11.30 |
申请人 |
IANNACCONE, GIUSEPPE;GIANLUCA, FIORI |
发明人 |
IANNACCONE, GIUSEPPE;GIANLUCA, FIORI |
分类号 |
H01L29/786;H01L21/334;H01L29/08;H01L29/778 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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