| 发明名称 |
REACTED LAYER FOR IMPROVING THICKNESS UNIFORMITY OF STRAINED STRUCTURES |
| 摘要 |
Methods are disclosed of forming and removing a reacted layer on a surface of a recess to provide mechanisms for improving thickness uniformity of a semiconductor material formed in the recess. The improved thickness uniformity in turn improves the uniformity of device performance.
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| 申请公布号 |
US2013143391(A1) |
申请公布日期 |
2013.06.06 |
| 申请号 |
US201113308928 |
申请日期 |
2011.12.01 |
| 申请人 |
LIN CHENG-TE;WANG CHIH-LIN;WU YI-HUANG;CHANG TZONG-SHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHENG-TE;WANG CHIH-LIN;WU YI-HUANG;CHANG TZONG-SHENG |
| 分类号 |
H01L21/20;H01L21/302 |
主分类号 |
H01L21/20 |
| 代理机构 |
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