RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS

摘要

A pattern is printed by forming a photoresist layer on a wafer, forming a protective film thereon, exposure, and development. The protective film is formed from a composition comprising a copolymer of hydroxystyrene with acenaphthylene and/or vinylnaphthalene and a mixture of an alcohol solvent and an ether or aromatic solvent.