INTEGRATED TERAHERTS IMAGING SYSTEMS

摘要

A low-power 4x4-pixel THz camera with responsiv ity greater than 2.5MV/W and sub- l OpW/vHz NEP at 0.25THz is integrated in 130nm silicon without using either high-resistivity substrates or silicon lenses. Imaging results with a fully integrated radiating CMOS power source demonstrate the first entirely silicon-based THz imager.