| 摘要 |
<p>Disclosed is a method of writing a resistance change type nonvolatile storage element which makes it possible to combine improved retention performance and an enlarged operating window. In this method of writing a resistance change type nonvolatile storage element, in "1" data (LR) writing (No in S2), first of all, in order to shift the resistance change type nonvolatile storage element to an intermediate resistance condition, weak HR writing processing (weak writing step S60) is executed, in which a weak HR voltage pulse set (19) is applied. Then, in order to shift the resistance change type nonvolatile storage element from this intermediate resistance condition to an LR condition, LR write processing is executed, in which an LR voltage pulse set (14) is applied (normal writing step S6 for LR).</p> |
