TANTALUM SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME

摘要

This tantalum sputtering target is characterized by the orientation ratio for (200) surfaces being 70% or less and the orientation ratio for (222) surfaces being 10% or greater on a sputtering surface on a tantalum sputtering target. The sputtering rate can be increased by controlling the crystal orientation of the target, and by this means, film growth of a necessary film thickness can be carried out in a short period of time, making improvements in throughput possible.