发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide means of reducing a size of a semiconductor device in a thickness direction. <P>SOLUTION: A semiconductor device 1 comprises: a first semiconductor chip 11; first conductors 13 formed on an electrode formation surface of the first semiconductor chip; a second semiconductor chip 21; second conductors 22 formed on an electrode formation surface of the second semiconductor chip; third conductors 23 formed on the electrode formation surface of the second semiconductor chip on parts where the second conductors are not formed; and external electrodes 15 connected to the third conductors. The first semiconductor chip is placed on the electrode formation surface of the second semiconductor chip such that the electrode formation surface of the first semiconductor chip faces the electrode formation surface of the second semiconductor chip, and the first conductors and the second conductors are connected. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013110264(A) |
申请公布日期 |
2013.06.06 |
申请号 |
JP20110253926 |
申请日期 |
2011.11.21 |
申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
YAMABE YASUSHI |
分类号 |
H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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