发明名称 METHOD OF PROCESSING SUBSTRATE BY ION BEAM, AND ION BEAM DEVICE FOR PROCESSING SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide an improved method for processing a substrate by an ion beam, and to provide an ion beam device for processing a substrate. <P>SOLUTION: A substrate (2) is processed by an ion beam (I) generated from the ion beam source (1.1) of an ion beam device (1) and directed toward the surface (2.1) of the substrate (2) in order to process the substrate (2). The ion beam (I) is guided by an orifice plate (1.3) formed of a carbon-containing material at least partially. Educts (E) reacting on carbon are guided between the orifice plate (1.3) and the substrate (2) in a flow having directivity, so that the carbon emitted from the orifice plate (1.3) by means of the ion beam (I) is oxidized. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013109865(A) 申请公布日期 2013.06.06
申请号 JP20110252023 申请日期 2011.11.17
申请人 ASPHERICON GMBH 发明人 SVEN KIONTKE
分类号 H01J37/305;G02B3/00;H01J37/09;H01J37/16;H01J37/20;H01L21/302 主分类号 H01J37/305
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