METHOD FOR MANUFACTURING SILICON CARBIDE WAFER, SILICON CARBIDE WAFER, SILICON CARBIDE SEMICONDUCTOR ELEMENT, AND POWER CONVERTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide wafer which prevents complication of a manufacture process, does not restrict a silicon carbide substrate, and is capable of more surely converting a basal plane dislocation (BPD) to a threading edge dislocation (TED).

SOLUTION: This method includes the first step in which Si ion is injected into one direction of a silicon carbide substrate 1 or the substrate 1 is irradiated with an electron beam, the second step in which the silicon carbide substrate 1 is subjected to annealing, and the third step in which one direction side of the silicon carbide substrate 1 is epitaxially grown to form an epitaxial film 3. The ion to be injected into the silicon carbide substrate is at least one kind selected from a group comprising Si ion, C ion, H ion, He ion, P ion, Al ion B ion and N ion.

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