COMPOSITION FOR FORMING FERROELECTRIC THIN FILM, METHOD FOR FORMING FERROELECTRIC THIN FILM, FERROELECTRIC THIN FILM, AND COMPOSITE ELETRONIC PART

摘要

PURPOSE: A composition for forming a ferroelectric thin film is provided to comprise a stabilizer and a specific molecular mass of polyvinylpyrrolidone in an optimum ratio, thereby preventing incidence of crack on a thick ferroelectric thin film even when containing lead acetate. CONSTITUTION: A composition for forming a ferroelectric thin film forms a ferroelectric thin film comprising a lead titanate-perovoskite film or a lead titanate zirconate-complex perovkite film. The composition comprises: a stabilizer comprising lead acetate, acetylacetone, or diethanolamine, and polyvinylpyrrolidone. To the mole number of perovskite B site atom contained in the composition, the mole ratio of monomer-converted polyvinylpyrrolidone is in excess of 0 and less than 0.015, the weight-average molecular weight of the polyvinylpyrrolidone is not less than 5000 and not exceeding 100000. The composition also comprises raw materials containing a metal element comprising a lead titanate-perovoskite film or a lead titanate zirconate-complex perovskite film.