| 摘要 |
PROBLEM TO BE SOLVED: To minimize variation in nitrogen concentration between the workpieces or between the lots by suppressing drop in nitrogen concentration in a film due to missing of N from a silicon oxynitride film formed by plasma nitriding. SOLUTION: The reforming method of an insulation film includes a nitriding step for forming a silicon oxynitride film by plasma nitriding a silicon oxide film exposed to the surface of a workpiece, and a reforming step for oxidizing the surface of the silicon oxynitride film. Vacuum atmosphere is maintained from finish of the nitriding step to start of the reforming step. Plasma nitriding is performed to satisfy a relation N<SB POS="POST">C0</SB>>N<SB POS="POST">CT</SB>, where N<SB POS="POST">C0</SB>is the nitrogen concentration in the silicon oxynitride film immediately after nitriding step, and N<SB POS="POST">CT</SB>is the target value of nitrogen concentration in the silicon oxynitride film after reforming step. COPYRIGHT: (C)2012,JPO&INPIT |
