| 摘要 |
A method of fabricating a FinFET 200 is disclosed which comprises the steps of forming a plurality of fins on a dielectric substrate. A gate layer (208, figure 2A) is deposited over the fins. In some embodiments the fin hardmask that is present on the tops of each fin is removed from some of the fins prior to the deposition of the gate layer. A gate hardmask (210) is then deposited over the gate layer. A portion of the gate hardmask layer and gate layer are then removed. In some embodiments this removal step also removes portions of the fins underneath. In other embodiments portions 202A, 202B, 202C of a subset of fins are removed with an etch. The portion of the etched sacrificial fins that remain are called finlets 220. These finlets remain under the gate of the FinFET. In some embodiments the remaining fins are subsequently merged together.
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