INTEGRATING N-TYPE AND P-TYPE METAL GATE TRANSISTORS,申请号EP20030814832-传众专利搜索

发明名称	INTEGRATING N-TYPE AND P-TYPE METAL GATE TRANSISTORS
摘要	<p>At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.</p>
申请公布号	EP1573803(B1)	申请公布日期	2013.06.05
申请号	EP20030814832	申请日期	2003.12.15
申请人	INTEL CORPORATION	发明人	DOCZY, MARK;KEATING, STEVEN;KAVALIEROS, JACK;DOYLE, BRIAN;BARNS, CHRIS;BARNAK, JOHN;MCSWINEY, MICHAEL;BRASK, JUSTIN
分类号	H01L21/8238;H01L21/3213;H01L21/336;H01L29/49;H01L29/78	主分类号	H01L21/8238
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