发明名称 SUBSTRATE FOR GROWING WURTZITE TYPE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE
摘要 A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer, wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation.
申请公布号 KR101270519(B1) 申请公布日期 2013.06.04
申请号 KR20090095436 申请日期 2009.10.08
申请人 发明人
分类号 H01L21/20;H01L21/205;H01L33/02 主分类号 H01L21/20
代理机构 代理人
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