发明名称 |
Mask ROM fabrication method |
摘要 |
A mask ROM fabrication method which comprises steps: sequentially forming a gate dielectric layer and a first photoresist layer on a substrate; letting a light having a wavelength of 365 nm pass through a first phase shift mask to photolithographically form on the first photoresist layer a plurality of first trenches having a width of 243-365 nm; doping the substrate to form a plurality of embedded bit lines having a width of 243-365 nm; removing the first photoresist layer; sequentially forming a polysilicon layer and a second photoresist layer on the gate dielectric layer; and letting the light pass through a second phase shift mask to photolithographically form a plurality of polysilicon word lines on the polysilicon layer. Thereby is reduced the line width of mask ROM to 243-365 nm and decreased the area of mask ROM.
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申请公布号 |
US8455342(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201113274857 |
申请日期 |
2011.10.17 |
申请人 |
CHEN KUANG-CHU;CHEN CHENG TAO;HSU CHUNG-LUNG;CHIU CHUN-YAO;CHANG CHIN-YUNG;NYQUEST TECHNOLOGY CORPORATION LIMITED;NUVOTON TECHNOLOGY CORPORATION |
发明人 |
CHEN KUANG-CHU;CHEN CHENG TAO;HSU CHUNG-LUNG;CHIU CHUN-YAO;CHANG CHIN-YUNG |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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地址 |
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