发明名称 |
Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
摘要 |
An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype. |
申请公布号 |
US8455328(B2) |
申请公布日期 |
2013.06.04 |
申请号 |
US201213463031 |
申请日期 |
2012.05.03 |
申请人 |
MAZZOLA MICHAEL S.;POWER INTEGRATIONS, INC. |
发明人 |
MAZZOLA MICHAEL S. |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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