发明名称 Memory write error correction circuit
摘要 Memory circuit includes; an array, row decoder, column decoder, addressing circuit to receive an address of the data bit, control logic receiving commands and transmitting control signals to memory system blocks, and sensing and write driver circuits coupled to a selected column. A hidden read compare circuit couples between the sensing circuit and write driver, which couples an error flag to the control logic circuit responsive to a comparison between a data bit in the input latch and a data-out read from the memory array. A write error address tag memory is responsive to the error flag and is coupled to the addressing circuit via a bidirectional bus. A data input output circuit having first and second bidirectional buses to transmit and receive said data bit is provided. Write error address tag memory stores the address if the error flag is set and provides the address during a re-write operation.
申请公布号 US8456926(B2) 申请公布日期 2013.06.04
申请号 US201113013616 申请日期 2011.01.25
申请人 ONG ADRIAN E.;NITIKIN VLADIMIR;GRANDIS, INC. 发明人 ONG ADRIAN E.;NITIKIN VLADIMIR
分类号 G11C7/00;G11C8/00;G11C11/00 主分类号 G11C7/00
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