SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce a current leakage using a high reliability gate insulating layer for high voltage. CONSTITUTION: A semiconductor substrate(100) has a high voltage region and a low voltage region. A high voltage transistor(TR-I) is formed in the high voltage region. The high voltage transistor includes a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode. A low voltage transistor(TR-II) is formed in the low voltage region. The low voltage transistor includes a second active area, a second source/drain region, a second gate insulating layer, and a second gate electrode.