| 摘要 |
The present invention relates to an n-type silicon photovoltaic cell structure comprising a substrate (2) having a first surface (2a) and a second surface (2b) and comprising silicon, wherein the second surface (2b) is situated on the essentially opposite side of the first surface (2a) of the substrate (2), a first deposit of materials (3a) on the first surface (2a) of the substrate (2) and a second deposit (3b) of materials on the second surface (2b)of the substrate (2). |
