| 摘要 |
<p>PROVIDED IS AN INORGANIC-PARTICLE-DISPERSED SPUTTERING TARGET IN WHICH INORGANIC PARTICLES ARE DISPERSED IN A CO BASE MATERIAL, WHEREIN THE INORGANIC PARTICLES HAVE AN ELECTRIC RESISTIVITY OF 1 X 101 ?=M OR LESS AND THE VOLUME RATIO OF THE INORGANIC PARTICLES IN THE TARGET IS 50% OR LESS. THE SPUTTERING TARGET THUS ADJUSTED IS ADVANTAGEOUS IN THAT, WHEN SPUTTERING IS PERFORMED USING A MAGNETRON SPUTTERING DEVICE COMPRISING A DC POWER SOURCE, THE INORGANIC PARTICLES ARE LESS CHARGED, AND ARCING OCCURS LESS FREQUENTLY. ACCORDINGLY, BY USING THE SPUTTERING TARGET OF THE PRESENT INVENTION, THE OCCURRENCE OF PARTICLES ATTRIBUTABLE TO THE ARCING REDUCES, AND A SIGNIFICANT EFFECT OF IMPROVING THE YIELD IN FORMING A THIN FILM IS OBTAINED.</p> |
