Semiconductor structure for MOSFET, has single well formed in contact with part of back gate of n-type double gate transistor and part of back gate of p-type double gate transistor, where gates are doped with same doping agent

摘要

The structure (1) has a n-type double gate transistor (1110) and a p-type double gate transistor (1210), which are formed with respective metal back gates (1101, 1201). Single well (1102) is formed in contact with a part of the back gate and a part of another back gate. An insulation trench (1400) electrically isolates the former back gate from the latter back gate. The back gates are doped with a same doping agent and electrically connected with each other. The well is formed in an area entirely recovering the back gates. The structure comprises silicon-on insulator substrate. An independent claim is also included for a method for manufacturing a semiconductor structure.