发明名称 FE-PT-BASED SPUTTERING TARGET WITH DISPERSED C GRAINS
摘要 <p>Fe-Pt-BASED SPUTTERING TARGET WITH DISPERSED C GRAINSA sintered compact sputtering target in which a composition ratio based on 5 atomicity is represented by a formula of (Feloo-x-Ptx)loo-A-CA (provided A is anumber which satisfies 20 SA 50 and Xis a number which satisfies 35S 55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher.An object of this invention is to enable the production of a magnetic thin film10 with granular structure without using an expensive simultaneous sputtering device, as well as provide a high-density sputtering target capable of reducing the amount of particles generated during sputtering.[Selected Drawing] Fig. 115</p>
申请公布号 SG189255(A1) 申请公布日期 2013.05.31
申请号 SG20130024963 申请日期 2011.11.14
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 SATO ATSUSHI;OGINO SHIN-ICHI
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