发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OFFORMING IPD IN FAN-OUT WAFER LEVEL CHIP SCALE PACKAGE |
摘要 |
Abstract SEMICONDUCTOR DEVICE AND METHOD OFFORMING IPD IN FAN—OUT WAFER LEVEL CHIP SCALE PACKAGEA semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer.The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.(Fig. 3m) |
申请公布号 |
SG189799(A1) |
申请公布日期 |
2013.05.31 |
申请号 |
SG20130029160 |
申请日期 |
2011.01.20 |
申请人 |
STATS CHIPPAC LTD |
发明人 |
LIN, YAOJIAN;FRYE, ROBERT C.;MARIMUTHU, PANDI CHELVAM;LIU, KAI |
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