| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor which can reduce leakage current caused by indirect light from backlight. <P>SOLUTION: A bottom-gate thin-film transistor for a display device comprises: a substrate 1; gate electrode wiring 2; a gate insulator 3; a first semiconductor layer 4 serving as a channel; a second semiconductor layer serving as first and second contact layers 5a, 5b; and source or drain electrode wiring 7a, 7b. An insulating semiconductor layer 6a, 6b is formed in exposed parts of the second semiconductor layer exposed from the source or drain electrode wiring 7a, 7b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
